Evaluation of ultrahigh-voltage 4H-SiC gate turn-Off thyristors and insulated-gate bipolar transistors for high-power applications / Daniel Johannesson, Muhammad Nawaz, Staffan Norrga, and Hans-Peter Nee.
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TextPublication details: New York ; The Institute of Electrical and Electronics Engineers, Inc. , April 2022.Description: Volume 37, pages 4133-4147 : illustration ; 28 cmDDC classification: - DPer 621.381 In821 April 2022 v. 37 n. 4
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UM Digos College - LIC | Periodicals | DPer 621.381 In821 April 2022 v. 37 n. 4 (Browse shelf(Opens below)) | Not for loan | Periodical Article |
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IEEE Transaction on Power Electronics, vol. 37, no. 4, pages 4133-4147, April 2022.
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