Evaluation of ultrahigh-voltage 4H-SiC gate turn-Off thyristors and insulated-gate bipolar transistors for high-power applications /
Johannesson, Daniel.
Evaluation of ultrahigh-voltage 4H-SiC gate turn-Off thyristors and insulated-gate bipolar transistors for high-power applications / Daniel Johannesson, Muhammad Nawaz, Staffan Norrga, and Hans-Peter Nee. - New York ; The Institute of Electrical and Electronics Engineers, Inc. , April 2022. - Volume 37, pages 4133-4147 : illustration ; 28 cm.
IEEE Transaction on Power Electronics, vol. 37, no. 4, pages 4133-4147, April 2022.
DPer 621.381 In821 April 2022 v. 37 n. 4
Evaluation of ultrahigh-voltage 4H-SiC gate turn-Off thyristors and insulated-gate bipolar transistors for high-power applications / Daniel Johannesson, Muhammad Nawaz, Staffan Norrga, and Hans-Peter Nee. - New York ; The Institute of Electrical and Electronics Engineers, Inc. , April 2022. - Volume 37, pages 4133-4147 : illustration ; 28 cm.
IEEE Transaction on Power Electronics, vol. 37, no. 4, pages 4133-4147, April 2022.
DPer 621.381 In821 April 2022 v. 37 n. 4