| 000 | 01035nam a22002417a 4500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20250410113819.0 | ||
| 008 | 240912b ||||| |||| 00| 0 eng d | ||
| 040 | _c0 | ||
| 082 | _aDPer 621.317 Ie21 December 2022 v.37 n. 12 part 1&2. | ||
| 100 |
_aZhang, _eauthor. _960905 |
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| 245 |
_aA high-sensitivity online junction temperature monitoring method for sic mosfets based on the turn-on drain-source current overshoot / _cQinghao Zhang, Geye Lu, and Pinjia Zhang. |
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| 260 |
_aNew York ; _bThe Institute of Electrical and Electronics Engineers, Inc., _cDecember 2022. |
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| 300 |
_avolume 37, pages 15493-15504, _billustration. |
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| 500 | _aIEEE Transactions on Power Electronics, v. 37 n. 12, pages 15493-15504, December 2022. | ||
| 650 | 0 |
_aJunction temperature. _966302 |
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| 650 | 0 |
_aMOSFET. _966303 |
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| 650 | 0 |
_asilicon carbide (SiC) device. _966304 |
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| 700 |
_aZhang, Qinghao. _eauthor. _960906 |
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| 700 |
_aLu, Geye. _eauthor. _960907 |
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| 700 |
_aZhang, Pinjia. _eauthor. _960908 |
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| 942 |
_2ddc _cPER |
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| 999 |
_c21573 _d21573 |
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