| 000 | 01120nam a22002537a 4500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20250904150838.0 | ||
| 008 | 240425b ||||| |||| 00| 0 eng d | ||
| 040 | _c0 | ||
| 082 | _aDPer 621.317 Ie21 November 2022 v. 37 n. 11 | ||
| 100 |
_aWang, Rui. _eauthor. _956705 |
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| 245 |
_aShort-circuit characteristic of single gate driven SiC MOSFET stack and its improvement with strong antishort circuit fault capabilities / _cRui Wang, Asger Bjorn Jorgensen, Hongbo Zhao, and Stig Munk-Nielsen. |
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| 260 |
_aNew York ; _bThe Institute of Electrical and Electronics Engineers, Inc. , _cNovember 2022. |
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| 300 |
_aVolume 37, pages 13577-13586 : _b illustration ; _c28 cm. |
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| 500 | _aIEEE Transactions on Power Electronics, vol. 37, no. 11, pages 13554-13565, November 2022. | ||
| 650 | 0 |
_a Circuit faults. _965925 |
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| 650 | 0 |
_aMOSFET. _966067 |
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| 650 | 0 |
_aThreshold voltage. _967226 |
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| 700 |
_aWang, Rui. _eauthor. _956705 |
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| 700 |
_aJorgensen, Asger Bjorn. _eauthor. _956706 |
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| 700 |
_aZhao, Hongbo. _eauthor. _956707 |
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| 700 |
_aMunk-Nielsen, Stig. _eauthor. _956708 |
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| 942 |
_2ddc _cPER |
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| 999 |
_c20163 _d20163 |
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