000			01431nam a22003137a 4500
003			OSt
005			20250904150605.0
008			240424b ||||| |||| 00| 0 eng d
040			_c0
082			_aDPer 621.317 Ie21 November 2022 v. 37 n. 11
100			_aJiang, Xiaofeng. _eauthor. _956597
245			_aImpact of gate resistance on improving the dynamic overcurrent stress of the Si/SiC hybrid switch / _cXiaofeng Jiang, Huaping Jiang, Xiaohan Zhong, Hua Mao, Zebing Wu, Lei Tang, Haoyu Chen, Jinpeng Cheng, and Li Ran.
260			_aNew York ; _bThe Institute of Electrical and Electronics Engineers, Inc. , _cNovember 2022.
300			_aVolume 37, pages 13319-13331 : _billustration ; _c28 cm.
500			_aIEEE Transactions on Power Electronics, vol. 37, no. 11, pages 13319-13331, November 2022.
650		0	_aDynamic overcurrent stress. _967180
650		0	_aSilicon carbide (SiC). _966092
650		0	_aSilicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET). _967181
700			_aJiang, Xiaofeng. _eauthor. _956597
700			_aJiang, Huaping. _eauthor. _956598
700			_aZhong, Xiaohan. _eauthor. _956599
700			_aMao, Hua. _eauthor. _956600
700			_aWu, Zebing. _eauthor. _956601
700			_aTang, Lei. _eauthor. _956602
700			_aChen, Haoyu. _eauthor. _956603
700			_aCheng, Jinpeng. _eauthor. _956604
700			_aRan, Li. _eauthor. _956605
942			_2ddc _cPER
999			_c20144 _d20144