000 01151nam a22002537a 4500
003 OSt
005 20251002180129.0
008 240403b ||||| |||| 00| 0 eng d
040 _c0
082 _aDPer 621.317 Ie21 October 2022 v. 37 n. 10
100 _aKuring, Carsten.
_eauthor.
_955966
245 _aGaN-based multichip half-bridge power module integrated on high-voltage AIN ceramic substrate /
_cCarsten Kuring, Michaela Wolf, Xiaomeng Geng, Oliver Hilt, Jan Böcker, Joachim Würfl, and Sibylle Dieckerhoff.
260 _aNew York ;
_bThe Institute of Electrical and Electronics Engineers, Inc. ,
_cOctober 2022.
300 _aVolume 37, pages 11896-11910 :
_billustration ;
_c28 cm.
500 _aIEEE Transactions on Power Electronics, v. 37, n. 10, pages 11896-11910, October 2022.
700 _aKuring, Carsten.
_eauthor.
_955966
700 _aWolf, Michaela.
_eauthor.
_955967
700 _aGeng, Xiaomeng.
_eauthor.
_955968
700 _aHilt, Oliver.
_eauthor.
_955969
700 _aBöcker, Jan.
_eauthor.
_955970
700 _aWürfl, Joachim.
_eauthor.
_955971
700 _aDieckerhoff, Sibylle.
_eauthor.
_955972
942 _2ddc
_cPER
999 _c19993
_d19993