000 01208nam a22002777a 4500
003 OSt
005 20251001163736.0
008 240403b ||||| |||| 00| 0 eng d
040 _c0
082 _aDPer 621.381 Ie21 October 2022 v. 37 n. 10
100 _aZhang, Chi.
_eauthor.
_955792
245 _aUnclamped-inductive-switching behaviors of p-GaN HEMTs at cryogenic temperature /
_cChi Zhang, Sheng Li, Weihao Lu, Siyang Liu, Yanfeng Ma, Jingwen Huang, Jiaxing Wei, Long Zhang, and Weifeng Sun.
260 _aNew York ;
_bThe Institute of Electrical and Electronics Engineers, Inc. ,
_cOctober 2022.
300 _aVolume 37, pages 11507-11510 :
_billustration ;
_c28 cm.
500 _aIEEE Transactions on Power Electronics, v. 37, n. 10, pages 11507-11510, October 2022.
700 _aZhang, Chi.
_eauthor.
_955792
700 _aLi, Sheng.
_eauthor.
_955793
700 _aLu, Weihao.
_eauthor.
_955794
700 _aLiu, Siyang.
_eauthor.
_955795
700 _aMa, Yanfeng.
_eauthor.
_955796
700 _aHuang, Jingwen.
_eauthor.
_955797
700 _aWei, Jiaxing.
_eauthor.
_955798
700 _aZhang, Long.
_eauthor.Weifeng Sun
_955799
700 _aSun, Weifeng.
_eauthor.
_955800
942 _2ddc
_cPER
999 _c19956
_d19956