| 000 | 01266nam a22002897a 4500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20250917153759.0 | ||
| 008 | 240325b ||||| |||| 00| 0 eng d | ||
| 040 | _c0 | ||
| 082 | _aDPer 621.381 In821 September 2022 v. 37 n. 9 | ||
| 100 |
_aDeng, Xiaochuan. _eauthor. _955296 |
||
| 245 |
_aInvestigation of failure mechanisms of 1200 V rated trench SiC MOSFETs under repetitive avalanche stress / _cXiaochuan Deng, Wei Huang, Xu Li, Xuan Li, Chao Chen, Yi Wen, Jiawei Ding, Wanjun Chen, Yongkui Sun, and Bo Zang. |
||
| 260 |
_aNew York ; _bThe Institute of Electrical and Electronics Engineers, Inc. , _cSeptember 2022. |
||
| 300 |
_aVolume 37, pages 10562-10571 : _billustration ; _c28 cm. |
||
| 500 | _aIEEE Transitions on Power Electronics, v. 37 n. 9, pages 10562-10571, September 2022. | ||
| 700 |
_aDeng, Xiaochuan. _eauthor. _955296 |
||
| 700 |
_aHuang, Wei. _eauthor. _955297 |
||
| 700 |
_aLi, Xu. _eauthor. _955298 |
||
| 700 |
_aLi, Xuan. _eauthor. _955299 |
||
| 700 |
_aChen, Chao. _eauthor. _955300 |
||
| 700 |
_aWen, Yi. _eauthor. _955301 |
||
| 700 |
_aDing, Jiawei. _eauthor. _955302 |
||
| 700 |
_aChen, Wanjun. _eauthor. _955303 |
||
| 700 |
_aSun, Yongkui. _eauthor. _955304 |
||
| 700 |
_aZang, Bo. _eauthor. _955305 |
||
| 942 |
_2ddc _cPER |
||
| 999 |
_c19833 _d19833 |
||