| 000 | 00862nam a22002057a 4500 | ||
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| 003 | OSt | ||
| 005 | 20250915172444.0 | ||
| 008 | 240322b ||||| |||| 00| 0 eng d | ||
| 040 | _c0 | ||
| 082 | _aDPer 621.381 In821 September 2022 v. 37 n. 9 | ||
| 100 |
_aLi, Xiao-Di. _eauthor. _955135 |
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| 245 |
_aReliable aluminum wire-bonded SiC/Si diodes with laminated Al/Cu stress buffers / _cXiao-Di Li, Guo-Quan Lu, and Yun-Hui Mei. |
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| 260 |
_aNew York ; _bThe Institute of Electrical and Electronics Engineers, Inc. , _cSeptember 2022. |
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| 300 |
_aVolume 37, pages 10149-10153 : _billustration ; _c28 cm. |
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| 500 | _aIEEE Transitions on Power Electronics, v. 37 n. 9, pages 10149-10153, September 2022. | ||
| 700 |
_aLi, Xiao-Di. _eauthor. _955135 |
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| 700 |
_aLu, Guo-Quan. _eauthor. _955136 |
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| 700 |
_aMei, Yun-Hui. _eauthor. _955137 |
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| 942 |
_2ddc _cPER |
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| 999 |
_c19789 _d19789 |
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