| 000 | 01201nam a22002777a 4500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20250922164540.0 | ||
| 008 | 240313b ||||| |||| 00| 0 eng d | ||
| 040 | _c0 | ||
| 082 | _aDPer 621.381 In821 August 2022 v. 37 n. 8 | ||
| 100 |
_aJiang, Huaping. _eauthor. _954556 |
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| 245 |
_aA physical explanation of threshold voltage drift of SiC MOSFET induced by gate switching / _cHuaping Jiang, Xiaowei Qi, Guanqun Qiu, Xiaohan Zhong, Lei Tang, Hua Mao, Zebing Wu, Honggang Chen, and Li Ran. |
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| 260 |
_aNew York ; _bThe Institute of Electrical and Electronics Engineers, Inc. , _cAugust 2022. |
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| 300 |
_aVolume 37, pages 8830-8834 : _billustration ; _c28 cm. |
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| 500 | _aIEEE Transitions on Power Electronics, v. 37 n. 8, pages 8830-8834, August 2022. | ||
| 700 |
_aJiang, Huaping. _eauthor. _954556 |
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| 700 |
_aQi, Xiaowei. _eauthor. _954557 |
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| 700 |
_aQiu, Guanqun. _eauthor. _954558 |
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| 700 |
_aZhong, Xiaohan. _eauthor. _954559 |
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| 700 |
_aTang, Lei. _eauthor. _954560 |
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| 700 |
_aMao, Hua. _eauthor. _954561 |
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| 700 |
_aWu, Zebing. _eauthor. _954562 |
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| 700 |
_aChen, Honggang. _eauthor. _954563 |
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| 700 |
_aRan, Li. _eauthor. _954564 |
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| 942 |
_2ddc _cPER |
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| 999 |
_c19658 _d19658 |
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