| 000 | 00991nam a22002297a 4500 | ||
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| 003 | OSt | ||
| 005 | 20250922164355.0 | ||
| 008 | 240313b ||||| |||| 00| 0 eng d | ||
| 040 | _c0 | ||
| 082 | _aDPer 621.381 In821 August 2022 v. 37 n. 8 | ||
| 100 |
_aOuyang, Wenyuan. _eauthor. _954551 |
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| 245 |
_aA fast short-circuit protection method for SiC MOSFET based on indirect power dissipation level / _cWenyuan Ouyang, Pengju Sun, Minghang Xie, Quanming Luo, and Xiong Du. |
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| 260 |
_aNew York ; _bThe Institute of Electrical and Electronics Engineers, Inc. , _cAugust 2022. |
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| 300 |
_aVolume 37, pages 8825-8829 : _billustration ; _c28 cm. |
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| 500 | _aIEEE Transitions on Power Electronics, v. 37 n. 8, pages 8825-8829, August 2022. | ||
| 700 |
_aOuyang, Wenyuan. _eauthor. _954551 |
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| 700 |
_aSun, Pengju. _eauthor. _954552 |
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| 700 |
_aXie, Minghang. _eauthor. _954553 |
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| 700 |
_aLuo, Quanming. _eauthor. _954554 |
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| 700 |
_aDu, Xiong. _eauthor. _954555 |
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| 942 |
_2ddc _cPER |
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| 999 |
_c19657 _d19657 |
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