| 000 | 00795nam a22001937a 4500 | ||
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| 003 | OSt | ||
| 005 | 20250827110150.0 | ||
| 008 | 240308b ||||| |||| 00| 0 eng d | ||
| 040 | _c0 | ||
| 082 | _aDPer 621.317 Ie21 July 2022 v. 37 n. 7 | ||
| 100 |
_aWang, Ning. _eauthor. _954176 |
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| 245 |
_aNonlinear capacitance model SiC MOSFET considering envelope of switching trajectory / _cNing Wang and Jianzhong Zhang. |
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| 260 |
_aNew York ; _bThe Institute of Electrical and Electronics Engineers, Inc. , _cJuly 2022. |
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| 300 |
_avolume 37, pages 7977-7988 : _billustration ; _c28 cm. |
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| 500 | _aIEEE Transactions on Power Electronics, vol. 37, no. 7, pages 7977-7988, July 2022. | ||
| 700 |
_aWang, Ning. _eauthor. _954176 |
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| 700 |
_aZhang, Jianzhong. _eauthor. _954177 |
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| 942 |
_2ddc _cPER |
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| 999 |
_c19562 _d19562 |
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