000			00993nam a22002297a 4500
003			OSt
005			20250827105850.0
008			240308b ||||| |||| 00| 0 eng d
040			_c0
082			_aDPer 621.317 Ie21 July 2022 v. 37 n. 7
100			_aLi, Yang. _eauthor. _954158
245			_aSwitching characteristic analysis and application assessment of SiC MOSFET with common source inductance and kelvin source connection / _cYang Li, Yan Zhang, Yuan Gao, Sixing Du, and Jinjun Liu.
260			_aNew York ; _bThe Institute of Electrical and Electronics Engineers, Inc. , _cJuly 2022.
300			_avolume 37, pages 7941-7951 : _billustration ; _c28 cm.
500			_aIEEE Transactions on Power Electronics, vol. 37, no. 7, pages 7941-7951, July 2022.
700			_aLi, Yang. _eauthor. _954158
700			_aZhang, Yan. _eauthor. _954159
700			_aGao, Yuan. _eauthor. _954160
700			_aDu, Sixing. _eauthor. _954161
700			_aLiu, Jinjun. _eauthor. _954162
942			_2ddc _cPER
999			_c19559 _d19559