000			01042nam a22002297a 4500
003			OSt
005			20250910094753.0
008			240226b ||||| |||| 00| 0 eng d
040			_c0
082			_aDPer 621.317 Ie21 June 2022 v. 37 n. 6
100			_aLu, Shengchang. _eauthor. _953353
245			_aImproved measurement accuracy for junction-to-case thermal resistance of Gan HEMT packages by gate-to-gate electrical interface materials / _cShengchang Lu, Zichen Zhang, Cyril Buttay, Khai D. T. Ngo, and Guo-Quan Lu.
260			_aNew York ; _bThe Institute of Electrical and Electronics Engineers, Inc. , _cJune 2022.
300			_aVolume 37, pages 6285-6289 : _billustration ; _c29 cm.
500			_aIEEE Transactions on Power Electronics, vol. 37, no. 6, pages 6285-6289, June 2022.
700			_aLu, Shengchang. _eauthor. _953353
700			_aZhang, Zichen. _eauthor. _953354
700			_aButtay, Cyril. _eauthor. _953355
700			_aNgo, Khai D. T. _eauthor. _953356
700			_aLu, Guo-Quan. _eauthor. _953357
942			_2ddc _cPER
999			_c19360 _d19360