000 01117nam a22002537a 4500
003 OSt
005 20250911170007.0
008 240222b ||||| |||| 00| 0 eng d
040 _c0
082 _aDPer 621.317 Ie21 May 2022 v. 37 n. 5
100 _aJiang, Zuoheng.
_eauthor.
_953132
245 _aNegative gate bias induced dynamic ON-resistance degradation in schottky-type p-gan gate HEMTs /
_cZuoheng Jiang, Mengyuan Hua, Xinran Huang, Lingling Li, Chengcai Wang, Junting Chen, and Kevin J. Chen.
260 _aNew York ;
_bThe Institute of Electrical and Electronics Engineers, Inc. ,
_cMay 2022.
300 _aVolume 37, pages 6018-6025 :
_billustration ;
_c28 cm.
500 _aIEEE Transactions on Power Electronics, vol. 37, no. 5, pages 6018-6025, May 2022.
700 _aJiang, Zuoheng.
_eauthor.
_953132
700 _aHua, Mengyuan.
_eauthor.
_953133
700 _aHuang, Xinran.
_eauthor.
_953134
700 _aLi, Lingling.
_eauthor.
_953135
700 _aWang, Chengcai.
_eauthor.
_953136
700 _aChen, Junting.
_eauthor.
_953137
700 _aChen, Kevin J.
_eauthor.
_953138
942 _2ddc
_cPER
999 _c19310
_d19310