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040 _c0
082 _aDPer 621.317 Ie21 May 2022 v. 37 n. 5
100 _aZhang, Chi.
_eauthor.
_953122
245 _aInvestigation on the degradation mechanism for GaN cascode device under repetitive hard-switching stress /
_cChi Zhang, Siyang Liu, Sheng Li, Yanfeng Ma, Weihao Lu, Jingwen Huang, Weifeng Sun, Zhuo Yang, Yuanzheng Zhu, and Lihua Ni.
260 _aNew York ;
_bThe Institute of Electrical and Electronics Engineers, Inc. ,
_cMay 2022.
300 _aVolume 37, pages 6009-6017 :
_billustration ;
_c28 cm.
500 _aIEEE Transactions on Power Electronics, vol. 37, no. 5, pages 6009-6017, May 2022.
700 _aZhang, Chi.
_eauthor.
_953122
700 _aLiu, Siyang.
_eauthor.
_953123
700 _aLi, Sheng.
_eauthor.
_953124
700 _aMa, Yanfeng.
_eauthor.
_953125
700 _aLu, Weihao.
_eauthor.
_953126
700 _aHuang, Jingwen.
_eauthor.
_953127
700 _aSun, Weifeng.
_eauthor.
_953128
700 _aYang, Zhuo.
_eauthor.
_953129
700 _aZhu, Yuanzheng.
_eauthor.
_953130
700 _aNi, Lihua.
_eauthor.
_953131
942 _2ddc
_cPER
999 _c19309
_d19309