000 01078nam a22002417a 4500
003 OSt
005 20250911173619.0
008 240206b ||||| |||| 00| 0 eng d
040 _c0
082 _aDPer 621.381 In821 April 2022 v. 37 n. 4
100 _aWilhelmi, Florian.
_eauthor.
_951541
245 _aPackaged β-Ga₂O₃ trench MOS schottky diode with nearly ideal junction properties /
_cFlorian Wilhelmi, Shinji Kunori, Kohei Sasaki, Akito Kuramata, Yuji Komatsu, and Andreas Lindemann.
260 _aNew York ;
_bThe Institute of Electrical and Electronics Engineers, Inc. ,
_cApril 2022.
300 _aVolume 37, pages 3737-3742 :
_billustration ;
_c28 cm.
500 _aIEEE Transactions on Power Electronics, vol. 37, no. 4, pages 3737-3742, April 2022.
700 _aWilhelmi, Florian.
_eauthor.
_951541
700 _aKunori, Shinji.
_eauthor.
_951542
700 _aSasaki, Kohei.
_eauthor.
_951543
700 _aKuramata, Akito.
_eauthor.
_951544
700 _aKomatsu, Yuji.
_eauthor.
_951545
700 _aLindemann, Andreas.
_eauthor.
_951546
942 _2ddc
_cPER
999 _c18941
_d18941