000 01066nam a22002657a 4500
003 OSt
005 20251017185841.0
008 240201b ||||| |||| 00| 0 eng d
040 _c0
082 _aDPer 621.317 Ie21 January 2022 v. 37 n. 1
100 _aLiu, Jiye.
_eauthor.
_951141
245 _aA quasi-two-level medium-voltage SiC MOSFET power module with low loss and voltage self-balance /
_cJiye Liu, Chi Li, Zedong Zheng, Kui Wang, and Yongdong Li.
260 _aNew York ;
_bThe Institute of Electrical and Electronics Engineers, Inc. ,
_cJanuary 2022.
300 _aVolume 37, pages 519-533 :
_billustration ;
_c28 cm.
500 _aIEEE Transactions on Power Electronics, v. 37 n. 1, pages 519-533, January 2022.
650 0 _aMOSFET.
_965862
650 0 _aSilicon carbide.
_965848
650 0 _aSwitches.
_965864
700 _aLiu, Jiye.
_eauthor.
_951141
700 _aLi, Chi.
_eauthor.
_951142
700 _aZheng, Zedong.
_eauthor.
_951143
700 _aWang, Kui.
_eauthor.
_951144
700 _aLi, Yongdong.
_eauthor.
_951145
942 _2ddc
_cPER
999 _c18863
_d18863