000 01181nam a22002777a 4500
003 OSt
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008 240201b ||||| |||| 00| 0 eng d
040 _c0
082 _aDPer 621.317 Ie21 January 2022 v. 37 n. 1
100 _aYang, Peng.
_eauthor.
_951112
245 _aHybrid data-driven modeling methodology for fast and accurate transient simulation for SiC MOSFETs /
_cPeng Yang, Wenlong Ming, Jun Liang, Ingo Ludtke, Steve Berry, and Konstantinos Floros.
260 _aNew York ;
_bThe Institute of Electrical and Electronics Engineers, Inc. ,
_cJanuary 2022.
300 _aVolume 37, pages 440-451 :
_billustration ;
_c28 cm.
500 _aIEEE Transactions on Power Electronics, v. 37 n. 1, pages 440-451, January 2022.
650 0 _aAdaptation models.
_965847
650 0 _aSilicon carbide.
_965848
650 0 _aTransient analysis.
_965849
700 _aYang, Peng.
_eauthor.
_951112
700 _aMing, Wenlong.
_eauthor.
_951113
700 _aLiang, Jun.
_eauthor.
_951114
700 _aLudtke, Ingo.
_eauthor.
_951115
700 _aBerry, Steve.
_eauthor.
_951116
700 _aFloros, Konstantinos.
_eauthor.
_951117
942 _2ddc
_cPER
999 _c18856
_d18856