| 000 | 01181nam a22002777a 4500 | ||
|---|---|---|---|
| 003 | OSt | ||
| 005 | 20251017171550.0 | ||
| 008 | 240201b ||||| |||| 00| 0 eng d | ||
| 040 | _c0 | ||
| 082 | _aDPer 621.317 Ie21 January 2022 v. 37 n. 1 | ||
| 100 |
_aYang, Peng. _eauthor. _951112 |
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| 245 |
_aHybrid data-driven modeling methodology for fast and accurate transient simulation for SiC MOSFETs / _cPeng Yang, Wenlong Ming, Jun Liang, Ingo Ludtke, Steve Berry, and Konstantinos Floros. |
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| 260 |
_aNew York ; _bThe Institute of Electrical and Electronics Engineers, Inc. , _cJanuary 2022. |
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| 300 |
_aVolume 37, pages 440-451 : _billustration ; _c28 cm. |
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| 500 | _aIEEE Transactions on Power Electronics, v. 37 n. 1, pages 440-451, January 2022. | ||
| 650 | 0 |
_aAdaptation models. _965847 |
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| 650 | 0 |
_aSilicon carbide. _965848 |
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| 650 | 0 |
_aTransient analysis. _965849 |
|
| 700 |
_aYang, Peng. _eauthor. _951112 |
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| 700 |
_aMing, Wenlong. _eauthor. _951113 |
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| 700 |
_aLiang, Jun. _eauthor. _951114 |
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| 700 |
_aLudtke, Ingo. _eauthor. _951115 |
||
| 700 |
_aBerry, Steve. _eauthor. _951116 |
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| 700 |
_aFloros, Konstantinos. _eauthor. _951117 |
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| 942 |
_2ddc _cPER |
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| 999 |
_c18856 _d18856 |
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