000			01195nam a22002777a 4500
003			OSt
005			20250318130126.0
008			240126b ||||| |||| 00| 0 eng d
040			_c0
082			_aDPer 621.317 Ie21 January 2022 v.37 n. 1
100			_aWu, Wangran. _eauthor. _950884
245			_aExperimental investigations on the electrical properties of 4H-SiC power MOSFETs under biaxial and uniaxial mechanical strains / _cWangran Wu, Hongyu Wei, Pengyu Tang, Guangan Yang, Jiaxing Wei, Siyang Liu, and Weifeng Sun.
260			_aNew York ; _bThe Institute of Electrical and Electronics Engineers, Inc., _cJanuary 2022.
300			_avolume 37, pages 55-58, _billustration.
500			_aIEEE Transactions on Power Electronic, v. 37 n. 1, pages 55-58, January 2022.
650			_aElectronics. _957020
650			_aElectric conductors. _957021
700			_aWu, Wangran. _eauthor. _950884
700			_aWei, Hongyu. _eauthor. _950885
700			_aTang, Pengyu. _eauthor. _950886
700			_aYang, Guangan. _eauthor. _950887
700			_aWei, Jiaxing. _eauthor. _950888
700			_aLiu, Siyang. _eauthor. _950889
700			_aSun, Weifeng. _eauthor. _950890
942			_2ddc _cPER
999			_c18788 _d18788