| 000 | 01403nam a22003257a 4500 | ||
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| 003 | OSt | ||
| 005 | 20250318124417.0 | ||
| 008 | 240126b ||||| |||| 00| 0 eng d | ||
| 040 | _c0 | ||
| 082 | _aDPer 621.317 Ie21 January 2022 v.37 n. 1 | ||
| 100 |
_aZhou, Feng. _eauthor. _950859 |
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| 245 |
_a1.2 kV/25 a normally off P-N junction/AlGaN/Gan HEMTs with nanosecond switching characteristics and robust overvoltage capability / _cFeng Zhou, Weizong Xu, Fangfang Ren, Yuanyang Xia, Leke Wu, Tinggang Zhu, Dunjun Chen, Rong Zhang, Youdou Zheng, and Hai Lu. |
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| 260 |
_aNew York ; _bThe Institute of Electrical and Electronics Engineers, Inc., _cJanuary 2022. |
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| 300 |
_avolume 37, _bpages 26-30, _cillustration. |
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| 500 | _aIEEE Transactions on Power Electronic, v. 37 n. 1, pages 26-30, January 2022. | ||
| 650 |
_aElectric circuits. _957010 |
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| 650 |
_aElectronics. _957011 |
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| 650 | 0 |
_a Dynamic breakdown. _965711 |
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| 700 |
_aZhou, Feng. _eauthor. _950859 |
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| 700 |
_aXu, Weizong. _eauthor. _950860 |
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| 700 |
_aRen, Fangfang. _eauthor. _950861 |
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| 700 |
_aXia, Yuanyang. _eauthor. _950862 |
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| 700 |
_aWu, Leke. _eauthor. _950863 |
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| 700 |
_aZhu, Tinggang. _eauthor. _950864 |
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| 700 |
_aChen, Dunjun. _eauthor. _950865 |
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| 700 |
_aZhang, Rong. _eauthor. _950866 |
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| 700 |
_aZheng, Youdou. _eauthor. _950867 |
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| 700 |
_aLu, Hai. _eauthor. _950868 |
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| 942 |
_2ddc _cPER |
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| 999 |
_c18783 _d18783 |
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