000 01403nam a22003257a 4500
003 OSt
005 20250318124417.0
008 240126b ||||| |||| 00| 0 eng d
040 _c0
082 _aDPer 621.317 Ie21 January 2022 v.37 n. 1
100 _aZhou, Feng.
_eauthor.
_950859
245 _a1.2 kV/25 a normally off P-N junction/AlGaN/Gan HEMTs with nanosecond switching characteristics and robust overvoltage capability /
_cFeng Zhou, Weizong Xu, Fangfang Ren, Yuanyang Xia, Leke Wu, Tinggang Zhu, Dunjun Chen, Rong Zhang, Youdou Zheng, and Hai Lu.
260 _aNew York ;
_bThe Institute of Electrical and Electronics Engineers, Inc.,
_cJanuary 2022.
300 _avolume 37,
_bpages 26-30,
_cillustration.
500 _aIEEE Transactions on Power Electronic, v. 37 n. 1, pages 26-30, January 2022.
650 _aElectric circuits.
_957010
650 _aElectronics.
_957011
650 0 _a Dynamic breakdown.
_965711
700 _aZhou, Feng.
_eauthor.
_950859
700 _aXu, Weizong.
_eauthor.
_950860
700 _aRen, Fangfang.
_eauthor.
_950861
700 _aXia, Yuanyang.
_eauthor.
_950862
700 _aWu, Leke.
_eauthor.
_950863
700 _aZhu, Tinggang.
_eauthor.
_950864
700 _aChen, Dunjun.
_eauthor.
_950865
700 _aZhang, Rong.
_eauthor.
_950866
700 _aZheng, Youdou.
_eauthor.
_950867
700 _aLu, Hai.
_eauthor.
_950868
942 _2ddc
_cPER
999 _c18783
_d18783