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1.
Short-circuit characteristic of single gate driven SiC MOSFET stack and its improvement with strong antishort circuit fault capabilities / Rui Wang, Asger Bjorn Jorgensen, Hongbo Zhao, and Stig Munk-Nielsen. by
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: New York ; The Institute of Electrical and Electronics Engineers, Inc. , November 2022
Availability: Items available for reference: UM Digos College - LIC: Not for loan (1)Call number: DPer 621.317 Ie21 November 2022 v. 37 n. 11.

2.
Enhanced power conversion capability of class-e power amplifiers with GaN HEMT based on cross-quadrant operation / Xianglin Hao, Jianlong Zou, Ke Yin, Xikui Ma, and Tianyu Dong. by
Material type: Text Text; Format: print ; Literary form: Not fiction
Publication details: New York ; The Institute of Electrical and Electronics Engineers, Inc. , November 2022
Availability: Items available for reference: UM Digos College - LIC: Not for loan (1)Call number: DPer 621.317 Ie21 November 2022 v. 37 n. 11.

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