Negative gate bias induced dynamic ON-resistance degradation in schottky-type p-gan gate HEMTs / Zuoheng Jiang, Mengyuan Hua, Xinran Huang, Lingling Li, Chengcai Wang, Junting Chen, and Kevin J. Chen.
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TextPublication details: New York ; The Institute of Electrical and Electronics Engineers, Inc. , May 2022.Description: Volume 37, pages 6018-6025 : illustration ; 28 cmDDC classification: - DPer 621.317 Ie21 May 2022 v. 37 n. 5
| Item type | Current library | Collection | Call number | Status | Notes | Date due | Barcode | |
|---|---|---|---|---|---|---|---|---|
Periodicals
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UM Digos College - LIC | Periodicals | DPer 621.317 Ie21 May 2022 v. 37 n. 5 (Browse shelf(Opens below)) | Not for loan | Periodical Article |
IEEE Transactions on Power Electronics, vol. 37, no. 5, pages 6018-6025, May 2022.
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