Experimental investigations on the electrical properties of 4H-SiC power MOSFETs under biaxial and uniaxial mechanical strains / Wangran Wu, Hongyu Wei, Pengyu Tang, Guangan Yang, Jiaxing Wei, Siyang Liu, and Weifeng Sun.
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TextPublication details: New York ; The Institute of Electrical and Electronics Engineers, Inc., January 2022.Description: volume 37, pages 55-58, illustrationSubject(s): DDC classification: - DPer 621.317 Ie21 January 2022 v.37 n. 1
| Item type | Current library | Collection | Call number | Status | Notes | Date due | Barcode | |
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Periodicals
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UM Digos College - LIC | Periodicals | DPer 621.317 Ie21 January 2022 v.37 n. 1 (Browse shelf(Opens below)) | Not for loan | Periodical Article |
IEEE Transactions on Power Electronic, v. 37 n. 1, pages 55-58, January 2022.
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