1.2 kV/25 a normally off P-N junction/AlGaN/Gan HEMTs with nanosecond switching characteristics and robust overvoltage capability / Feng Zhou, Weizong Xu, Fangfang Ren, Yuanyang Xia, Leke Wu, Tinggang Zhu, Dunjun Chen, Rong Zhang, Youdou Zheng, and Hai Lu.
Material type:
TextPublication details: New York ; The Institute of Electrical and Electronics Engineers, Inc., January 2022.Description: volume 37, pages 26-30, illustrationSubject(s): DDC classification: - DPer 621.317 Ie21 January 2022 v.37 n. 1
| Item type | Current library | Collection | Call number | Status | Notes | Date due | Barcode | |
|---|---|---|---|---|---|---|---|---|
Periodicals
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UM Digos College - LIC | Periodicals | DPer 621.317 Ie21 January 2022 v.37 n. 1 (Browse shelf(Opens below)) | Not for loan | Periodical Article |
IEEE Transactions on Power Electronic, v. 37 n. 1, pages 26-30, January 2022.
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