<?xml version="1.0" encoding="utf-8" ?> <rss version="2.0" xmlns:opensearch="http://a9.com/-/spec/opensearch/1.1/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:atom="http://www.w3.org/2005/Atom"> <channel> <title> <![CDATA[Home | UMDC Learning and Information Center Search for 'an:67226']]> </title> <link> /cgi-bin/koha/opac-search.pl?q=ccl=an%3A67226&#38;sort_by=relevance&#38;format=rss </link> <atom:link rel="self" type="application/rss+xml" href="/cgi-bin/koha/opac-search.pl?q=ccl=an%3A67226&#38;sort_by=relevance&#38;format=rss"/> <description> <![CDATA[ Search results for 'an:67226' at Home | UMDC Learning and Information Center]]> </description> <opensearch:totalResults>2</opensearch:totalResults> <opensearch:startIndex>0</opensearch:startIndex> <opensearch:itemsPerPage>50</opensearch:itemsPerPage> <atom:link rel="search" type="application/opensearchdescription+xml" href="/cgi-bin/koha/opac-search.pl?q=ccl=an%3A67226&#38;sort_by=relevance&#38;format=opensearchdescription"/> <opensearch:Query role="request" searchTerms="q%3Dccl%3Dan%253A67226" startPage="" /> <item> <title> Short-circuit characteristic of single gate driven SiC MOSFET stack and its improvement with strong antishort circuit fault capabilities / </title> <dc:identifier>ISBN:</dc:identifier> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=20163</link> <description> <![CDATA[ <p> By Wang, Rui..<br /> New York ; The Institute of Electrical and Electronics Engineers, Inc. , 2022 .<br /> Volume 37, pages 13577-13586 : , IEEE Transactions on Power Electronics, vol. 37, no. 11, pages 13554-13565, November 2022. 28 cm..<br /> </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=20163">Place hold on <em>Short-circuit characteristic of single gate driven SiC MOSFET stack and its improvement with strong antishort circuit fault capabilities / </em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=20163</guid> </item> <item> <title> Enhanced power conversion capability of class-e power amplifiers with GaN HEMT based on cross-quadrant operation / </title> <dc:identifier>ISBN:</dc:identifier> <link>/cgi-bin/koha/opac-detail.pl?biblionumber=20192</link> <description> <![CDATA[ <p> By Hao, Xianglin..<br /> New York ; The Institute of Electrical and Electronics Engineers, Inc. , 2022 .<br /> Volume 37, pages 13966-13977 : , IEEE Transactions on Power Electronics, vol. 37, no. 11, pages 13966-13977, November 2022. 28 cm..<br /> </p> ]]> <![CDATA[ <p> <a href="/cgi-bin/koha/opac-reserve.pl?biblionumber=20192">Place hold on <em>Enhanced power conversion capability of class-e power amplifiers with GaN HEMT based on cross-quadrant operation /</em></a> </p> ]]> </description> <guid>/cgi-bin/koha/opac-detail.pl?biblionumber=20192</guid> </item> </channel> </rss>
