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Short-circuit characteristic of single gate driven SiC MOSFET stack and its improvement with strong antishort circuit fault capabilities /

By Wang, Rui..
New York ; The Institute of Electrical and Electronics Engineers, Inc. , 2022 .
Volume 37, pages 13577-13586 : , IEEE Transactions on Power Electronics, vol. 37, no. 11, pages 13554-13565, November 2022. 28 cm..

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A low-cost novel structure for paralleled sic jfet/si mosfet cascodes to balance turn-on current and junction temperature /

By Zhao, Cheng..
New York ; The Institute of Electrical and Electronics Engineers, Inc., 2022 .
volume 37, pages 14447-14461, , IEEE Transactions on Power Electronics, v. 37 n. 12, pages 14447-14461, December 2022.

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