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Investigation of failure mechanisms of 1200 V rated trench SiC MOSFETs under repetitive avalanche stress / Xiaochuan Deng, Wei Huang, Xu Li, Xuan Li, Chao Chen, Yi Wen, Jiawei Ding, Wanjun Chen, Yongkui Sun, and Bo Zang. by
- Deng, Xiaochuan [author.]
- Deng, Xiaochuan [author.]
- Huang, Wei [author.]
- Li, Xu [author.]
- Li, Xuan [author.]
- Chen, Chao [author.]
- Wen, Yi [author.]
- Ding, Jiawei [author.]
- Chen, Wanjun [author.]
- Sun, Yongkui [author.]
- Zang, Bo [author.]
Material type: Text; Format:
print
; Literary form:
Not fiction
Publication details: New York ; The Institute of Electrical and Electronics Engineers, Inc. , September 2022
Availability: Items available for reference: UM Digos College - LIC: Not for loan (1)Call number: DPer 621.381 In821 September 2022 v. 37 n. 9.
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