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A physical explanation of threshold voltage drift of SiC MOSFET induced by gate switching / Huaping Jiang, Xiaowei Qi, Guanqun Qiu, Xiaohan Zhong, Lei Tang, Hua Mao, Zebing Wu, Honggang Chen, and Li Ran. by
- Jiang, Huaping [author.]
- Jiang, Huaping [author.]
- Qi, Xiaowei [author.]
- Qiu, Guanqun [author.]
- Zhong, Xiaohan [author.]
- Tang, Lei [author.]
- Mao, Hua [author.]
- Wu, Zebing [author.]
- Chen, Honggang [author.]
- Ran, Li [author.]
Material type: Text; Format:
print
; Literary form:
Not fiction
Publication details: New York ; The Institute of Electrical and Electronics Engineers, Inc. , August 2022
Availability: Items available for reference: UM Digos College - LIC: Not for loan (1)Call number: DPer 621.381 In821 August 2022 v. 37 n. 8.
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