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Investigation on the degradation mechanism for GaN cascode device under repetitive hard-switching stress / Chi Zhang, Siyang Liu, Sheng Li, Yanfeng Ma, Weihao Lu, Jingwen Huang, Weifeng Sun, Zhuo Yang, Yuanzheng Zhu, and Lihua Ni. by
- Zhang, Chi [author.]
- Zhang, Chi [author.]
- Liu, Siyang [author.]
- Li, Sheng [author.]
- Ma, Yanfeng [author.]
- Lu, Weihao [author.]
- Huang, Jingwen [author.]
- Sun, Weifeng [author.]
- Yang, Zhuo [author.]
- Zhu, Yuanzheng [author.]
- Ni, Lihua [author.]
Material type: Text; Format:
print
; Literary form:
Not fiction
Publication details: New York ; The Institute of Electrical and Electronics Engineers, Inc. , May 2022
Availability: Items available for reference: UM Digos College - LIC: Not for loan (1)Call number: DPer 621.317 Ie21 May 2022 v. 37 n. 5.
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