Zhang, <br/><br/>
A high-sensitivity online junction temperature monitoring method for sic mosfets based on the turn-on drain-source current overshoot / 
Qinghao Zhang, Geye Lu, and Pinjia Zhang. 
 - New York ;  The Institute of Electrical and Electronics Engineers, Inc.,   December 2022. 
 - volume 37, pages 15493-15504,  illustration. 
<br/><br/> IEEE Transactions on Power Electronics, v. 37 n. 12, pages 15493-15504, December 2022.  
<br/><br/><label>Subjects--Topical Terms: </label><br/>Junction temperature.<br/>MOSFET.<br/>silicon carbide (SiC) device.
<br/><br/><label>Dewey Class. No.: </label>DPer 621.317 Ie21 December 2022 v.37 n. 12 part 1&2.