Wang, Rui. <br/><br/>
Short-circuit characteristic of single gate driven SiC MOSFET stack and its improvement with strong antishort circuit fault capabilities /  
Rui Wang, Asger Bjorn Jorgensen, Hongbo Zhao, and Stig Munk-Nielsen. 
 - New York ;  The Institute of Electrical and Electronics Engineers, Inc. ,  November 2022. 
 - Volume 37, pages 13577-13586 :   illustration ;  28 cm. 
<br/><br/> IEEE Transactions on Power Electronics, vol. 37, no. 11, pages 13554-13565, November 2022. 
<br/><br/><label>Subjects--Topical Terms: </label><br/> Circuit faults.<br/>MOSFET.<br/>Threshold voltage.
<br/><br/><label>Dewey Class. No.: </label>DPer 621.317 Ie21 November 2022 v. 37 n. 11