Jiang, Xiaofeng. <br/><br/>
Impact of gate resistance on improving the dynamic overcurrent stress of the Si/SiC hybrid switch /  
Xiaofeng Jiang, Huaping Jiang, Xiaohan Zhong, Hua Mao, Zebing Wu, Lei Tang, Haoyu Chen, Jinpeng Cheng, and Li Ran. 
 - New York ;   The Institute of Electrical and Electronics Engineers, Inc. ,  November 2022. 
 - Volume 37, pages 13319-13331 :  illustration ;  28 cm. 
<br/><br/> IEEE Transactions on Power Electronics, vol. 37, no. 11, pages 13319-13331, November 2022. 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Dynamic overcurrent stress.<br/>Silicon carbide (SiC).<br/>Silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET).
<br/><br/><label>Dewey Class. No.: </label>DPer 621.317 Ie21 November 2022 v. 37 n. 11