TY  - BOOK
AU  - Deng, Xiaochuan.
AU  - Deng, Xiaochuan.
AU  - Huang, Wei.
AU  - Li, Xu.
AU  - Li, Xuan.
AU  - Chen, Chao.
AU  - Wen, Yi.
AU  - Ding, Jiawei.
AU  - Chen, Wanjun.
AU  - Sun, Yongkui.
AU  - Zang, Bo.
TI  - Investigation of failure mechanisms of 1200 V rated trench SiC MOSFETs under repetitive avalanche stress
U1  - DPer 621.381 In821 September 2022 v. 37 n. 9 
PY  - 2022///
CY  - New York ; 
PB  - The Institute of Electrical and Electronics Engineers, Inc. , 
N1  - IEEE Transitions on Power Electronics, v. 37 n. 9, pages 10562-10571, September 2022
ER  -