Deng, Xiaochuan. <br/><br/>
Investigation of failure mechanisms of 1200 V rated trench SiC MOSFETs under repetitive avalanche stress / 
Xiaochuan Deng, Wei Huang, Xu Li, Xuan Li, Chao Chen, Yi Wen, Jiawei Ding, Wanjun Chen, Yongkui Sun, and Bo Zang. 
 - New York ;   The Institute of Electrical and Electronics Engineers, Inc. ,   September 2022. 
 - Volume 37, pages 10562-10571 :  illustration ;  28 cm. 
<br/><br/> IEEE Transitions on Power Electronics, v. 37 n. 9, pages 10562-10571, September 2022. 
<br/><br/><label>Dewey Class. No.: </label>DPer 621.381 In821 September 2022 v. 37 n. 9