Jiang, Huaping. <br/><br/>
A physical explanation of threshold voltage drift of SiC MOSFET induced by gate switching  / 
Huaping Jiang, Xiaowei Qi, Guanqun Qiu, Xiaohan Zhong, Lei Tang, Hua Mao, Zebing Wu, Honggang Chen, and Li Ran. 
 - New York ;   The Institute of Electrical and Electronics Engineers, Inc. ,   August 2022. 
 - Volume 37, pages 8830-8834 :  illustration ;  28 cm. 
<br/><br/> IEEE Transitions on Power Electronics, v. 37 n. 8, pages 8830-8834, August 2022. 
<br/><br/><label>Dewey Class. No.: </label>DPer 621.381 In821 August 2022 v. 37 n. 8