Ouyang, Wenyuan. <br/><br/>
A fast short-circuit protection method for SiC MOSFET based on indirect power dissipation level / 
Wenyuan Ouyang, Pengju Sun, Minghang Xie, Quanming Luo, and Xiong Du. 
 - New York ;   The Institute of Electrical and Electronics Engineers, Inc. ,   August 2022. 
 - Volume 37, pages 8825-8829 :  illustration ;  28 cm. 
<br/><br/> IEEE Transitions on Power Electronics, v. 37 n. 8, pages 8825-8829, August 2022. 
<br/><br/><label>Dewey Class. No.: </label>DPer 621.381 In821 August 2022 v. 37 n. 8