Jiang, Zuoheng. <br/><br/>
Negative gate bias induced dynamic ON-resistance degradation in schottky-type p-gan gate HEMTs / 
Zuoheng Jiang, Mengyuan Hua, Xinran Huang, Lingling Li, Chengcai Wang, Junting Chen, and Kevin J. Chen. 
 - New York ;   The Institute of Electrical and Electronics Engineers, Inc. ,   May 2022. 
 - Volume 37, pages 6018-6025 :  illustration ;  28 cm. 
<br/><br/> IEEE Transactions on Power Electronics, vol. 37, no. 5, pages 6018-6025, May 2022. 
<br/><br/><label>Dewey Class. No.: </label>DPer 621.317 Ie21 May 2022 v. 37 n. 5