Yang, Peng.

Hybrid data-driven modeling methodology for fast and accurate transient simulation for SiC MOSFETs / Peng Yang, Wenlong Ming, Jun Liang, Ingo Ludtke, Steve Berry, and Konstantinos Floros. - New York ; The Institute of Electrical and Electronics Engineers, Inc. , January 2022. - Volume 37, pages 440-451 : illustration ; 28 cm.

IEEE Transactions on Power Electronics, v. 37 n. 1, pages 440-451, January 2022.


Adaptation models.
Silicon carbide.
Transient analysis.

DPer 621.317 Ie21 January 2022 v. 37 n. 1