Wu, Wangran.

Experimental investigations on the electrical properties of 4H-SiC power MOSFETs under biaxial and uniaxial mechanical strains / Wangran Wu, Hongyu Wei, Pengyu Tang, Guangan Yang, Jiaxing Wei, Siyang Liu, and Weifeng Sun. - New York ; The Institute of Electrical and Electronics Engineers, Inc., January 2022. - volume 37, pages 55-58, illustration.

IEEE Transactions on Power Electronic, v. 37 n. 1, pages 55-58, January 2022.


Electronics.
Electric conductors.

DPer 621.317 Ie21 January 2022 v.37 n. 1