Experimental investigations on the electrical properties of 4H-SiC power MOSFETs under biaxial and uniaxial mechanical strains /
Wangran Wu, Hongyu Wei, Pengyu Tang, Guangan Yang, Jiaxing Wei, Siyang Liu, and Weifeng Sun.
- New York ; The Institute of Electrical and Electronics Engineers, Inc., January 2022.
- volume 37, pages 55-58, illustration.
IEEE Transactions on Power Electronic, v. 37 n. 1, pages 55-58, January 2022.