Zhou, Feng. <br/><br/>
1.2 kV/25 a normally off P-N junction/AlGaN/Gan HEMTs with nanosecond switching characteristics and robust overvoltage capability / 
Feng Zhou, Weizong Xu, Fangfang Ren, Yuanyang Xia, Leke Wu, Tinggang Zhu, Dunjun Chen, Rong Zhang, Youdou Zheng, and Hai Lu. 
 - New York ;   The Institute of Electrical and Electronics Engineers, Inc.,   January 2022. 
 - volume 37,   pages 26-30,   illustration. 
<br/><br/> IEEE Transactions on Power Electronic, v. 37 n. 1, pages 26-30, January 2022. 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Electric circuits. 	<br/>Electronics.<br/> Dynamic breakdown.
<br/><br/><label>Dewey Class. No.: </label>DPer 621.317 Ie21 January 2022 v.37 n. 1