Investigation of failure mechanisms of 1200 V rated trench SiC MOSFETs under repetitive avalanche stress / Xiaochuan Deng, Wei Huang, Xu Li, Xuan Li, Chao Chen, Yi Wen, Jiawei Ding, Wanjun Chen, Yongkui Sun, and Bo Zang.
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TextPublication details: New York ; The Institute of Electrical and Electronics Engineers, Inc. , September 2022.Description: Volume 37, pages 10562-10571 : illustration ; 28 cmDDC classification: - DPer 621.381 In821 September 2022 v. 37 n. 9
| Item type | Current library | Collection | Call number | Status | Notes | Date due | Barcode | |
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Periodicals
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UM Digos College - LIC | Periodicals | DPer 621.381 In821 September 2022 v. 37 n. 9 (Browse shelf(Opens below)) | Not for loan | Periodical Article |
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| DPer 621.381 In821 September 2022 v. 37 n. 9 A review of multisampling techniques in power electronics applications / | DPer 621.381 In821 September 2022 v. 37 n. 9 Accurate high-frequency modeling of the input admittance of PWM grid-connected VSCs / | DPer 621.381 In821 September 2022 v. 37 n. 9 Chip-level electrothermal stress calculation method of high-power IGBT modules in system-level simulation / | DPer 621.381 In821 September 2022 v. 37 n. 9 Investigation of failure mechanisms of 1200 V rated trench SiC MOSFETs under repetitive avalanche stress / | DPer 621.381 In821 September 2022 v. 37 n. 9 Gate capacitance characterization of silicon carbide and silicon power MOSFETs revisited / | DPer 621.381 In821 September 2022 v. 37 n. 9 Equivalent circuit model of a pulse planar transformer and endurance to abrupt dv/dt / | DPer 621.381 In821 September 2022 v. 37 n. 9 Resolution improvement in a high-power magnetic resonance imaging gradient power amplifier / |
IEEE Transitions on Power Electronics, v. 37 n. 9, pages 10562-10571, September 2022.
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