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An integrated GaN overcurrent protection circuit for power HEMTs using senseHEMT / Wan Ling Jiang, Samantha Kadee Murray, Mohammad Shawka Zaman, Herbert De Vleeschouwer, Peter Moens, Jaume Roig, and Olivier Trescases.

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TextPublication details: New York ; The Institute of Electrical and Electronics Engineers, Inc. , August 2022.Description: Volume 37, pages 9314-9324 : illustration ; 28 cmDDC classification:

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Item type	Current library	Collection	Call number	Status	Notes	Date due	Barcode
Periodicals	UM Digos College - LIC	Periodicals	DPer 621.381 In821 August 2022 v. 37 n. 8 (Browse shelf(Opens below))	Not for loan	Periodical Article

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Previous	DPer 621.381 In821 August 2022 v. 37 n. 8 Improved switching ripple modulation strategy for simultaneous power conversion and data communication in DC–DC converters /	DPer 621.381 In821 August 2022 v. 37 n. 8 Variable turn-off gate voltage drive for voltage balancing of high-speed SiC MOSFETs in series-connection /	DPer 621.381 In821 August 2022 v. 37 n. 8 Graph model-based generative layout optimalization for heterogenous SiC multichip power module with reduced and balanced parasitic inductance /	DPer 621.381 In821 August 2022 v. 37 n. 8 An integrated GaN overcurrent protection circuit for power HEMTs using senseHEMT /	DPer 621.381 In821 August 2022 v. 37 n. 8 High-efficiency low-EMI buck converter using multistep PWL and PVT insensitive oscillator /	DPer 621.381 In821 August 2022 v. 37 n. 8 Improved EMI behavioral modeling method of three-phase inverter based on the noise-source phase alignment /	DPer 621.381 In821 August 2022 v. 37 n. 8 Common high-frequency bus-based cascaded multilevel solid-state transformer with ripple and unbalance power decoupling channel /	Next

IEEE Transitions on Power Electronics, v. 37 n. 8, pages 9314-9324, August 2022.

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