Demonstration of picosecond 4H-SiC avalanche shaper with voltage rise rate of 11.14 k V/ns and peak power density of 62 MW/cm² /
Zhou, Yu.
Demonstration of picosecond 4H-SiC avalanche shaper with voltage rise rate of 11.14 k V/ns and peak power density of 62 MW/cm² / Yu Zhou, Xiaoyan Tang, Qingwen Song, Chao Han, Hao Yuan, Yancong Liu, Sicheng Liu, Yimen Zhang, and Yuming Zhang. - New York ; he Institute of Electrical and Electronics Engineers, Inc. , April 2022. - Volume 37, pages 3724-3727 : illustration ; 28 cm.
IEEE Transactions on Power Electronics, vol. 37, no. 4, pages 3724-3727, April 2022.
DPer 621.381 In821 April 2022 v. 37 n. 4
Demonstration of picosecond 4H-SiC avalanche shaper with voltage rise rate of 11.14 k V/ns and peak power density of 62 MW/cm² / Yu Zhou, Xiaoyan Tang, Qingwen Song, Chao Han, Hao Yuan, Yancong Liu, Sicheng Liu, Yimen Zhang, and Yuming Zhang. - New York ; he Institute of Electrical and Electronics Engineers, Inc. , April 2022. - Volume 37, pages 3724-3727 : illustration ; 28 cm.
IEEE Transactions on Power Electronics, vol. 37, no. 4, pages 3724-3727, April 2022.
DPer 621.381 In821 April 2022 v. 37 n. 4