Impact of gate resistance on improving the dynamic overcurrent stress of the Si/SiC hybrid switch /
Jiang, Xiaofeng.
Impact of gate resistance on improving the dynamic overcurrent stress of the Si/SiC hybrid switch / Xiaofeng Jiang, Huaping Jiang, Xiaohan Zhong, Hua Mao, Zebing Wu, Lei Tang, Haoyu Chen, Jinpeng Cheng, and Li Ran. - New York ; The Institute of Electrical and Electronics Engineers, Inc. , November 2022. - Volume 37, pages 13319-13331 : illustration ; 28 cm.
IEEE Transactions on Power Electronics, vol. 37, no. 11, pages 13319-13331, November 2022.
Dynamic overcurrent stress.
Silicon carbide (SiC).
Silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET).
DPer 621.317 Ie21 November 2022 v. 37 n. 11
Impact of gate resistance on improving the dynamic overcurrent stress of the Si/SiC hybrid switch / Xiaofeng Jiang, Huaping Jiang, Xiaohan Zhong, Hua Mao, Zebing Wu, Lei Tang, Haoyu Chen, Jinpeng Cheng, and Li Ran. - New York ; The Institute of Electrical and Electronics Engineers, Inc. , November 2022. - Volume 37, pages 13319-13331 : illustration ; 28 cm.
IEEE Transactions on Power Electronics, vol. 37, no. 11, pages 13319-13331, November 2022.
Dynamic overcurrent stress.
Silicon carbide (SiC).
Silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET).
DPer 621.317 Ie21 November 2022 v. 37 n. 11