Improved measurement accuracy for junction-to-case thermal resistance of Gan HEMT packages by gate-to-gate electrical interface materials /
Lu, Shengchang.
Improved measurement accuracy for junction-to-case thermal resistance of Gan HEMT packages by gate-to-gate electrical interface materials / Shengchang Lu, Zichen Zhang, Cyril Buttay, Khai D. T. Ngo, and Guo-Quan Lu. - New York ; The Institute of Electrical and Electronics Engineers, Inc. , June 2022. - Volume 37, pages 6285-6289 : illustration ; 29 cm.
IEEE Transactions on Power Electronics, vol. 37, no. 6, pages 6285-6289, June 2022.
DPer 621.317 Ie21 June 2022 v. 37 n. 6
Improved measurement accuracy for junction-to-case thermal resistance of Gan HEMT packages by gate-to-gate electrical interface materials / Shengchang Lu, Zichen Zhang, Cyril Buttay, Khai D. T. Ngo, and Guo-Quan Lu. - New York ; The Institute of Electrical and Electronics Engineers, Inc. , June 2022. - Volume 37, pages 6285-6289 : illustration ; 29 cm.
IEEE Transactions on Power Electronics, vol. 37, no. 6, pages 6285-6289, June 2022.
DPer 621.317 Ie21 June 2022 v. 37 n. 6
