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Breakthrough short circuit robustness demonstrated in vertical GaN Fin JFET /

Zhang, Ruizhe.

Breakthrough short circuit robustness demonstrated in vertical GaN Fin JFET / Ruizhe Zhang, Jingcun Liu, Qiang Li, Subhash Pidaparthi, Andrew Edwards, Cliff Drowley, and Yuhao Zhang. - New York ; The Institute of Electrical and Electronics Engineers, Inc. , June 2022. - Volume 37, pages 6253-6258 : illustration ; 29 cm.

IEEE Transactions on Power Electronics, vol. 37, no. 6, pages 6253-6258, June 2022.

DPer 621.317 Ie21 June 2022 v. 37 n. 6