Investigation on the degradation mechanism for GaN cascode device under repetitive hard-switching stress /
Zhang, Chi.
Investigation on the degradation mechanism for GaN cascode device under repetitive hard-switching stress / Chi Zhang, Siyang Liu, Sheng Li, Yanfeng Ma, Weihao Lu, Jingwen Huang, Weifeng Sun, Zhuo Yang, Yuanzheng Zhu, and Lihua Ni. - New York ; The Institute of Electrical and Electronics Engineers, Inc. , May 2022. - Volume 37, pages 6009-6017 : illustration ; 28 cm.
IEEE Transactions on Power Electronics, vol. 37, no. 5, pages 6009-6017, May 2022.
DPer 621.317 Ie21 May 2022 v. 37 n. 5
Investigation on the degradation mechanism for GaN cascode device under repetitive hard-switching stress / Chi Zhang, Siyang Liu, Sheng Li, Yanfeng Ma, Weihao Lu, Jingwen Huang, Weifeng Sun, Zhuo Yang, Yuanzheng Zhu, and Lihua Ni. - New York ; The Institute of Electrical and Electronics Engineers, Inc. , May 2022. - Volume 37, pages 6009-6017 : illustration ; 28 cm.
IEEE Transactions on Power Electronics, vol. 37, no. 5, pages 6009-6017, May 2022.
DPer 621.317 Ie21 May 2022 v. 37 n. 5