Packaged β-Ga₂O₃ trench MOS schottky diode with nearly ideal junction properties /
Wilhelmi, Florian.
Packaged β-Ga₂O₃ trench MOS schottky diode with nearly ideal junction properties / Florian Wilhelmi, Shinji Kunori, Kohei Sasaki, Akito Kuramata, Yuji Komatsu, and Andreas Lindemann. - New York ; The Institute of Electrical and Electronics Engineers, Inc. , April 2022. - Volume 37, pages 3737-3742 : illustration ; 28 cm.
IEEE Transactions on Power Electronics, vol. 37, no. 4, pages 3737-3742, April 2022.
DPer 621.381 In821 April 2022 v. 37 n. 4
Packaged β-Ga₂O₃ trench MOS schottky diode with nearly ideal junction properties / Florian Wilhelmi, Shinji Kunori, Kohei Sasaki, Akito Kuramata, Yuji Komatsu, and Andreas Lindemann. - New York ; The Institute of Electrical and Electronics Engineers, Inc. , April 2022. - Volume 37, pages 3737-3742 : illustration ; 28 cm.
IEEE Transactions on Power Electronics, vol. 37, no. 4, pages 3737-3742, April 2022.
DPer 621.381 In821 April 2022 v. 37 n. 4